8 - Electrochemical etching strategy for shaping monolithic 3D structures from 4H‐SiC wafers/ClipID:49088 previous clip next clip

Keywords: Symposium Silicon carbide Chair of Applied Physics Lehrstuhl für Angewandte Physik Anniversary
Recording date 2023-09-14

Course

Symposium Silicon Carbide as Quantum-Classical Platform - 75th Anniversary of the Chair of Applied Physics

Lecturer

André Hochreiter

Via

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Language

English

Organisational Unit

Lehrstuhl für Angewandte Physik

Producer

Lehrstuhl für Angewandte Physik

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10 - Silicon carbide as a material for high Q nanomechanical systems
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11 - High‐field phenomena in SiC material and devices
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12 - Transition to green energy – The role of SiC based components in power electronics
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13 - Color centers in a glister of a gem stone: a theoretical perspective on defects in SiC from doping to quantum applications
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Prof. Dr. Michel Bockstedte
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