Willkommen zu der Lehre an Nano-Elektronik. In dieser Unik werden wir über PN-Jugend und MOS-Strukturen reden.

Wie in der letzten Session, wird dies ein Recapp von Dingen sein, die Sie bereits in den Basis-Kursen gelernt haben, und die Basis für die Unterhaltung der folgenden Uniken werden wir vorstellen.

Zunächst werde ich Sie mit den Zielen dieses Uniks ausführen, die eine Deskription von PN-Jugend und MOS-Strukturen sind, und weiter eine sehr initiale Diskussion über die Prozessintegration, die zu der Formation der PN-Jugend und MOS-Strukturen führt.

In der letzten Unik haben wir bereits über Bandstrukturmodelle und Karrierekonzentrationen gesprochen und wie die Densität der Karrierekonzentrationen von den Fermidirekt-Statistiken ausgelacht werden.

Als zweites Thema haben wir über den Karriertransport in Semiconductoren und die Interaktion von Karrieren mit Interfaces, zum Beispiel mit Interfaces zu Insulators gesprochen.

Derived from this, we will analyze two very basic electron devices. PN-Jugends are a very simple combination of P-type and N-type materials,

and at the interface there is a certain mixture of diffusion and generation of electric fields that gives a stable situation in the equilibrium of the two

and at the interface there is a certain mixture of diffusion and generation of electric fields that gives a stable situation in the equilibrium of the two

which can be overcome by adding or by imposing electrical fields or voltages from outside.

We will talk about both the formation of this equilibrium and the resulting distribution of carriers and electric fields,

and how to overcome this situation.

In the second part we will talk about metal oxide semiconductor structure,

and we will talk about the formation of this equilibrium and the resulting distribution of carriers and electric fields,

and how to overcome this state of non-conductance by applying external bias conditions.

In the second part we will talk about metal oxide semiconductor structure, which is at the heart of modern MOS threats.

In the second part we will talk about metal oxide semiconductor structure, which is at the heart of modern MOS threats.

In the third part we will highlight in the first part this MOS structure as itself,

and afterwards discuss about how to utilize this by adding some contacts for injection of electrons or holes,

depending on if you are using the configuration as an NMOS or a PMOS transistor,

and discuss about the current voltage relations that are coming with these devices.

As already mentioned, the capture ends with a comprehensive introduction to the fabrication of CMOS circuits.

This is the respective outline of this unit.

In the chapter on PN junctures we will take the band structure models as discussed last time,

and we will look into contacting P and N-type semiconductor structures,

look at the charges or charge distributions, the fields and the potential distributions,

then have an eye on the diode operation,

and very special insight into the formation of so-called space charge regions,

which resemble regions where three carriers are swept away,

and you only have the remaining charges that come from the doping elements that are incorporated into the lattice.

As some fixed charges in the space, and that's the reason why it's called space charge region.

The second part focuses on the MOS structure and MOS field effect transistors as already introduced.

First of all, we will highlight the operation modes of the MOS diode.

The diode is typically assigned to a device that has only two terminals, like in the PN junction.

This is the case for the MOS diode.

We will come to this later and I will come back also to this introductory or this definition clauses.

Afterwards, we will talk about the threshold voltage,

which is clearly or directly related to one of the operation modes of the MOS diode.

But in this case, it's already the MOSFET, where we added the contacts for carrying carriers to the channel,

so-called channel of the MOSFET, and also for taking them away after crossing the MOSFET.

The threshold voltage is a very special characteristic of this MOSFET,

which then leads us to the definition and to highlighting the operation ranges of MOSFETs,

bringing us to close modeling of MOSFETs in a very simple and first-order model,

the so-called Schiechmann-Hodges model.

Derived from this and also in preparation of the following units,

we will talk about the barycetic elements of MOSFETs, which have some impact on the function on one side of MOSFETs,

mainly in the high-frequency region, for example,

but also are very relevant for scaling MOSFETs down to very small dimensions.

And the chapter on processing will conclude this session.

Now let us start with the discussion of PN junctions.

In the last unit, we already talked about the bandstructure models of solids,