Symposium Silicon Carbide as Quantum-Classical Platform - 75th Anniversary of the Chair of Applied Physics /CoursesID:3542
- Most recent entry on 2023-09-15
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Keywords: quantum classical Symposium Silicon carbide Chair of Applied Physics Lehrstuhl für Angewandte Physik Anniversary SiC

Organisational Unit

Lehrstuhl für Angewandte Physik

Recording type

Kongress

Language

Silicon carbide (SiC) has developed into a high-performance semiconductor technology in recent years. This goes hand in hand with excellent monocrystalline wafer material and continuously improving process technology as well as understanding of SiC’s fundamental material and device physics. However, SiC and its derived materials, epitaxial graphene and SiC’s point defects, have much more to offer: Due to unrivaled material parameters, SiC has also the potential for unprecedented functionalities in the realm of photonics on a chip, highest-Q mechanics and quantum-technology oriented spin physics. This vast design space, which opens up scope for new experiments and technologies, is yet to be explored.

In this scientific symposium, we pick up this trail and discuss the possibilities of combining electronics, optics, mechanics and spin physics to create a platform for combined quantum and classical functionality.

The symposium simultaneously celebrates the 75th anniversary of FAU’s Chair of Applied Physics with its significant and long-lasting contribution to the development of today’s SiC material platform and technology.

Associated Clips

Episode
Title
Lecturer
Updated
Via
Duration
Media
1
Welcoming remarks
Prof. Dr. Andreas Hirsch
2023-09-14
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00:05:23
2
Welcoming remarks
Prof. Dr. Kai Phillip Schmidt
2023-09-14
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00:04:05
3
A review of the evolution of the Chair of Applied Physics and novel experiments on light-matter interactions on silicon carbide
Prof. Dr. Heiko Weber
2023-09-14
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00:36:50
4
Modern research data management in teaching and research
Dr. Michael Krieger
2023-09-14
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00:52:02
5
A snapshot of SiC history from before the creation of the solar system to the early nineteen seventies
Prof. Dr. Wolfgang J. Choyke
2023-09-14
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00:49:43
6
Long history of research and development of SiC for real application of power devices
Prof. Dr. Hiroyuki Matsunami
2023-09-14
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00:36:36
7
Applications of color centers in 4H‐SiC
Prof. Dr.-Ing. Roland Nagy
2023-09-14
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00:38:40
8
Electrochemical etching strategy for shaping monolithic 3D structures from 4H‐SiC wafers
André Hochreiter
2023-09-14
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00:32:15
9
Bavarian Chips Alliance
Dr. Malte Kohring
2023-09-14
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00:06:14
10
Silicon carbide as a material for high Q nanomechanical systems
Prof. Dr. Eva Weig
2023-09-14
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00:43:46
11
High‐field phenomena in SiC material and devices
Prof. Dr. Tsunenobu Kimoto
2023-09-15
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00:39:42
12
Transition to green energy – The role of SiC based components in power electronics
Dr. Peter Friedrichs
2023-09-15
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00:44:25
13
Color centers in a glister of a gem stone: a theoretical perspective on defects in SiC from doping to quantum applications
Prof. Dr. Michel Bockstedte
2023-09-15
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00:52:34
14
The TS center in 4H‐SiC
Johannes Lehmeyer
2023-09-15
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00:17:21
15
Sensing in SiC devices using silicon vacancy created by particle beam writing technique
Dr. Takeshi Ohshima
2023-09-15
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00:40:23
16
Atomic monolayers on SiC as 2D quantum materials
Prof. Dr. Ralph Claessen
2023-09-15
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00:58:37
17
The squeezable nanojunction technique as a tunable light‐ matter interface
Alexander Fuchs
2023-09-15
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00:20:36
18
Silicon Carbide as a platform for integrated nanophotonic components
Dr. Robert Cernansky
2023-09-15
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00:27:41
19
Spin and photonic quantum technology with defects in SiC
Dr. Florian Kaiser
2023-09-15
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00:49:58
20
Closing remarks
Prof. Dr. Heiko Weber
2023-09-15
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00:10:01

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