14 - The TS center in 4H‐SiC/ClipID:49103 previous clip next clip

Keywords: Symposium Silicon carbide Chair of Applied Physics Lehrstuhl für Angewandte Physik Anniversary
Recording date 2023-09-15

Course

Symposium Silicon Carbide as Quantum-Classical Platform - 75th Anniversary of the Chair of Applied Physics

Lecturer

Johannes Lehmeyer

Via

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Language

English

Organisational Unit

Lehrstuhl für Angewandte Physik

Producer

Lehrstuhl für Angewandte Physik

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15 - Sensing in SiC devices using silicon vacancy created by particle beam writing technique
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16 - Atomic monolayers on SiC as 2D quantum materials
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17 - The squeezable nanojunction technique as a tunable light‐ matter interface
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18 - Silicon Carbide as a platform for integrated nanophotonic components
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19 - Spin and photonic quantum technology with defects in SiC
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Dr. Florian Kaiser
2023-09-15
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